www.irf.com 1 09/02/11 IRG7P313UPBF descriptionthis igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak currentcapability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
e c g n-channel g c e gate collector emitter to-247ac IRG7P313UPBF g c e c v ce min 330 v v ce(on) typ. @ i c = 20a 1.35 v i rp max @ t c = 25c 200 a t j max 150 c key parameters absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v i c @ t c = 100c continuous collector, v ge @ 15v a i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range c soldering temperature for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case CCC 1.4 c/w 300 -40 to + 150 8936 0.71 max. 20 200 40 30 downloaded from: http:///
2 www.irf.com half sine wave with duty cycle = 0.05, ton=2 sec. r is measured at t j of approximately 90c. pulse width 400 s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 330 CCC CCC v ? v ces / ? t j breakdown voltage temp. coefficient CCC 0.4 CCC v/c CCC 1.21 1.45 CCC 1.35 CCC 1.75 CCC v CCC 2.14 CCC CCC 1.41 CCC v ge(th) gate threshold voltage 2.2 CCC 4.7 v ? v ge(th) / ? t j gate threshold voltage coefficient CCC -10 CCC mv/c i ces collector-to-emitter leakage current CCC 1.0 10 25 150 CCC 75 CCC i ges gate-to-emitter forward leakage CCC CCC 100 na gate-to-emitter reverse leakage CCC CCC -100 g fe forward transconductance CCC 47 CCC s q g total gate charge CCC 33 CCC nc q gc gate-to-collector charge CCC 12 CCC t d(on) turn-on delay time CCC 11 CCC i c = 12a, v cc = 196v t r rise time CCC 13 CCC ns r g = 10 , l=210 h t d(off) turn-off delay time CCC 75 CCC t j = 25c t f fall time CCC 68 CCC t d(on) turn-on delay time CCC 11 CCC i c = 12a, v cc = 196v t r rise time CCC 14 CCC ns r g = 10 , l=200 h, l s = 150nh t d(off) turn-off delay time CCC 86 CCC t j = 150c t f fall time CCC 190 CCC t st shoot through blocking time 100 CCC CCC ns e pulse energy per pulse j human body model machine model c ies input capacitance CCC 880 CCC c oes output capacitance CCC 47 CCC pf c res reverse transfer capacitance CCC 26 CCC l c internal collector inductance between lead, nh 6mm (0.25in.) l e internal emitter inductance from package CCCCCC 4.5 7.5 CCCCCC esd class 1c (per jedec standard jesd22-a114) class b (per eia/jedec standard eia/jesd22-a115) v ce = 30v v ge = 0v conditions v ge = 0v, i ce = 250 a reference to 25c, i ce = 1ma v ge = 15v, i ce = 60a v ge = 15v, i ce = 12a v ge = 15v, i ce = 20a ? = 1.0mhz and center of die contact l = 220nh, c= 0.20 f, v ge = 15v l = 220nh, c= 0.20 f, v ge = 15v v cc = 240v, r g = 5.1 , t j = 100c v ce = v ge , i ce = 1.0ma v ce = 330v, v ge = 0v v ce = 330v, v ge = 0v, t j = 150c v ge = 30v v ge = -30v a v ce = 330v, v ge = 0v, t j = 125c CCC 570 CCC v ce = 25v, i ce = 12a v ce = 240v, i c = 12a, v ge = 15v v cc = 240v, r g = 5.1 , t j = 25c CCC 480 CCC v cc = 240v, v ge = 15v, r g = 5.1 static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 20a, t j = 150c v ge = 15v, i ce = 40a downloaded from: http:///
www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 024681 0 v ce (v) 0 40 80 120 160 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 2 4 6 8 10 12 14 16 v ge (v) 0 40 80 120 160 200 i c e ( a ) t j = 25c t j = 150c 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) t j = 25c t j = 150c i c = 12a downloaded from: http:///
4 www.irf.com fig 7. maximum collector current vs. case temperature fig 8. typical repetitive peak current vs. case temperature fig 10. typical e pulse vs. collector-to-supply voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area 160 170 180 190 200 210 220 230 i c , peak collector current (a) 400 500 600 700 800 900 1000 1100 1200 1300 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 25 50 75 100 125 150 t j , temperature (oc) 400 600 800 1000 1200 1400 1600 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1 s half sine c= 0.4 f c= 0.3 f c= 0.2 f 195 200 205 210 215 220 225 230 235 240 v cc, collector-to-supply voltage (v) 600 700 800 900 1000 1100 1200 1300 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4 f 100c 25c 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 sec 100 sec tc = 25c tj = 150c single pulse 1msec 25 50 75 100 125 150 case temperature (c) 0 50 100 150 200 250 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 2 s duty cycle = 0.05 half sine wave 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 35 40 i c ( a ) downloaded from: http:///
www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 100 200 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 1 02 03 04 0 q g total gate charge (nc) 0 4 8 12 16 20 v g e , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 240v v ds = 150v v ds = 60v i d = 12a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.02636 0.0000110.59571 0.000202 0.64316 0.002121 0.33388 0.014614 downloaded from: http:///
6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l fig. 17 - gate charge circuit (turn-off) driver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st downloaded from: http:///
www.irf.com 7 data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2011 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
year 1 = 2001 dat e code part number international logo rect ifier assembly 56 57 irfpe30 135h line h indi cates "l ead-f ree" week 35 lot code in the assembly line "h" as s embled on ww 35, 2001 note: "p" in as sembly line position example: with assembly this is an irfpe30 lot code 5657 downloaded from: http:///
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